Toshiba Expands GaN HEMT Product Family with Power Amplifier for Extended Ku-Band Satcom Applications
Poster: SySAdmin
Posted on June 7, 2011 at 8:14:01 AM
Toshiba Expands GaN HEMT Product Family with Power Amplifier for Extended Ku-Band Satcom Applications
High Power, High Gain Devices Include Toshiba's GaN Amplifier for Satcom to Support VSAT
BALTIMORE, Md., June 7, 2011 /PRNewswire/ -- 2011 INTERNATIONAL MICROWAVE SYMPOSIUM, BALTIMORE, Booth #2306 - This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family. Toshiba is located in booth #2306 at 2011 IMS which is being held in Baltimore, Maryland from June 7 through 9.
The TGI1314-25L, Toshiba's new GaN HEMT for Ku-band satellite communication application, operates in the 13.75GHz(1) to 14.5GHz range with output power of 25W. The device features output power of 44.0dBm (typ.) with 39dBm input power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.). The new product is targeted to Satcom applications including very small aperture terminals (VSAT).
"The expansion of Toshiba's GaN power amplifier family brings higher gain and very efficient features to microwave designers, which reduce heat sink requirements and enable smaller terminals and converters with a full GaN HEMT line-up that includes drivers," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, TAEC Discrete Business Unit. "Since Toshiba released its 50W Ku-band product a few years ago, many customers have requested a full line-up of GaN HEMTs, which will simplify the power supply design of Solid-State Power Amplifiers (SSPA) and block up converters (BUC). In addition, small output power applications, such as VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment possible."
In 2009, Toshiba announced the addition of the Extended Ku-band TGI1314-50L to its GaN power amplifier family, which operates in the 13.75GHz to 14.5GHz range for Satcom to support SSPA applications. The TGI1314-50L is now in mass production.
Technical Specifications
Product Characteristics TGI1314-25L
Frequency 13.75 - 14.5GHz
Output Power, Pout(typ.) 44.0dBm@Pin9.0dBm
Linear Gain, GL(typ.) 8.0dB
3rd Order Intermodulation
Distortion(min.) -25dBc@Po7.0dBm S.C.L.
Drain Current, VDS/
IDS(typ.) +24V/2.5A
Efficiency 29%
Package 7- AA07A
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Samples and Availability
Samples of the TGI1314-25L will be available in the third quarter 2011, with mass production scheduled for the fourth quarter 2011. For availability of samples, please contact your Toshiba representative.
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium nitride (GaN) and gallium arsenide (GaAs) microwave devices that operate in S, C, X, Ku and Ka frequency bands. The company's high-power products are used in a wide variety of wireless applications, such as Satcom (SSPA/BUC/VSAT), microwave link (PTP, PTMP), RADAR, medical equipment, and other industrial applications.
About Toshiba Corp. and TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2010 WW Semiconductor Revenue, Jan. 2011). Toshiba was founded in 1875, and today operates a global network of more than 740 companies, with 204,000 employees worldwide and annual sales surpassing $77 billion.
For additional company and product information, please visit http://www.toshiba.com/taec/.
(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com, or from your TAEC representative.
Editor's Note: Images available for download from: http://www.toshiba.com/taec/news/press_releases/2011/mwrf_11_612.jsp
AGENCY CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com
SOURCE Toshiba America Electronic Components, Inc.
Toshiba America Electronic Components, Inc.
CONTACT: Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com
Web Site: http://www.toshiba.com/taec
High Power, High Gain Devices Include Toshiba's GaN Amplifier for Satcom to Support VSAT
BALTIMORE, Md., June 7, 2011 /PRNewswire/ -- 2011 INTERNATIONAL MICROWAVE SYMPOSIUM, BALTIMORE, Booth #2306 - This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family. Toshiba is located in booth #2306 at 2011 IMS which is being held in Baltimore, Maryland from June 7 through 9.
The TGI1314-25L, Toshiba's new GaN HEMT for Ku-band satellite communication application, operates in the 13.75GHz(1) to 14.5GHz range with output power of 25W. The device features output power of 44.0dBm (typ.) with 39dBm input power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.). The new product is targeted to Satcom applications including very small aperture terminals (VSAT).
"The expansion of Toshiba's GaN power amplifier family brings higher gain and very efficient features to microwave designers, which reduce heat sink requirements and enable smaller terminals and converters with a full GaN HEMT line-up that includes drivers," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, TAEC Discrete Business Unit. "Since Toshiba released its 50W Ku-band product a few years ago, many customers have requested a full line-up of GaN HEMTs, which will simplify the power supply design of Solid-State Power Amplifiers (SSPA) and block up converters (BUC). In addition, small output power applications, such as VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment possible."
In 2009, Toshiba announced the addition of the Extended Ku-band TGI1314-50L to its GaN power amplifier family, which operates in the 13.75GHz to 14.5GHz range for Satcom to support SSPA applications. The TGI1314-50L is now in mass production.
Technical Specifications
Product Characteristics TGI1314-25L
Frequency 13.75 - 14.5GHz
Output Power, Pout(typ.) 44.0dBm@Pin9.0dBm
Linear Gain, GL(typ.) 8.0dB
3rd Order Intermodulation
Distortion(min.) -25dBc@Po7.0dBm S.C.L.
Drain Current, VDS/
IDS(typ.) +24V/2.5A
Efficiency 29%
Package 7- AA07A
------- --------
Samples and Availability
Samples of the TGI1314-25L will be available in the third quarter 2011, with mass production scheduled for the fourth quarter 2011. For availability of samples, please contact your Toshiba representative.
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium nitride (GaN) and gallium arsenide (GaAs) microwave devices that operate in S, C, X, Ku and Ka frequency bands. The company's high-power products are used in a wide variety of wireless applications, such as Satcom (SSPA/BUC/VSAT), microwave link (PTP, PTMP), RADAR, medical equipment, and other industrial applications.
About Toshiba Corp. and TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2010 WW Semiconductor Revenue, Jan. 2011). Toshiba was founded in 1875, and today operates a global network of more than 740 companies, with 204,000 employees worldwide and annual sales surpassing $77 billion.
For additional company and product information, please visit http://www.toshiba.com/taec/.
(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com, or from your TAEC representative.
Editor's Note: Images available for download from: http://www.toshiba.com/taec/news/press_releases/2011/mwrf_11_612.jsp
AGENCY CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com
SOURCE Toshiba America Electronic Components, Inc.
Toshiba America Electronic Components, Inc.
CONTACT: Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com
Web Site: http://www.toshiba.com/taec